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DCR4330M52
Phase Control Thyristor Preliminary Information
DS5941-1.0 March 2009 (LN 26624)
FEATURES
Double Side Cooling High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 5200V 4325A 53400A 2000V/s 400A/s
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 5200 5000 4500 Conditions
* Higher dV/dt selections available
DCR4330M52* DCR4330M50 DCR4330M45
Tvj = -40 to 125 C C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Lower voltage grades available. o o *5000V @ -40 C, 5200V @ 0 C
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR4330M52
Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order.
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DCR4330M52
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60 unless stated otherwise C
Symbol Double Side Cooled IT(AV) IT(RMS) IT
Parameter
Test Conditions
Max.
Units
Mean on-state current RMS value Continuous (direct) on-state current
Half wave resistive load -
4325 6790 6250
A A A
SURGE RATINGS
Symbol ITSM It
2
Parameter Surge (non-repetitive) on-state current I t for fusing
2
Test Conditions 10ms half sine, Tcase = 125 C VR = 0
Max. 53.4 14.25
Units kA MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 83.0kN (with mounting compound) Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force Double side Single side Min. -55 74.0 Max. 0.00518 0.01012 0.01080 0.001 0.002 135 125 125 91.0 Units C/W C/W C/W C/W C/W C C C kN
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DCR4330M52
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current
Test Conditions At VRRM/VDRM, Tcase = 125 C To 67% VDRM, Tj = 125 gate open C, From 67% VDRM to 2x IT(AV) Gate source 30V, 10 , tr < 0.5s, Tj = 125 C
Repetitive 50Hz Non-repetitive
Min. -
Max. 300 2000 400 1000
Units mA V/s A/s A/s
VT(TO)
Threshold voltage - Low level Threshold voltage - High level
1000 to 2600A at Tcase = 125 C 2600 to 9000A at Tcase = 125 C 1000 to 2600A at Tcase = 125 C 2600 to 9000A at Tcase = 125 C VD = 67% VDRM, gate source 30V, 10 tr = 0.5s, Tj = 25 C
-
0.85 0.99 0.2115 0.1578 3
V V m m s
rT
On-state slope resistance - Low level On-state slope resistance - High level
tgd
Delay time
tq
Turn-off time
Tj = 125 C, VR = 200V, dI/dt = 1A/s, dVDR/dt = 20V/s linear
750
s
QS
Stored charge IT = 3000A, Tj = 125 dI/dt - 1A/s, C, VRpeak ~3100V, VR ~ 2100V
4030
5420
C
IRR
Reverse recovery current
49
59
A
IL
Latching current
Tj = 25 VD = 5V C,
-
3
A
IH
Holding current
Tj = 25 RG-K = , ITM = 500A, IT = 5A C,
-
300
mA
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DCR4330M52
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT VGD IGT IGD
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM = 5V, Tcase = 25 C At 50% VDRM, Tcase = 125 C VDRM = 5V, Tcase = 25 C At 50% VDRM, Tcase = 125 C
Max. 1.5 0.4 300 10
Units V V mA mA
CURVES
9000 8000 Instantaneous on-staate current, I T - (A) 7000 6000 5000 4000 3000 2000 1000 0 0 0.5 1 1.5 2 2.5 Instantaneous on-state voltage , VT - (V) min @ 125C max @ 125C max @ 25C min @ 25C
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION VTM = A + Bln (IT) + C.IT+D. IT
A = 0.061592 B = 0.115333 C = 0.000119 D = 0.002394 these values are valid for Tj = 125 for IT 250A to 9000A C
Where
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DCR4330M52
SEMICONDUCTOR
12 180 120 90 60 30
130 120 ( oC ) 110 100 90 80 70 60 50 40 30 20 10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 Mean on-state current, IT(AV) - (A) 0
0 500 1000 1500 2000 2500 3000 3500 4000 4500
10 Mean power dissipation - (kW)
180 120 90 60 30
6
4
2
0
Maximum case temperature, T
8
case
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation - sine wave
Fig.4 Maximum permissible case temperature, double side cooled - sine wave
125 Maximum heatsink temperature, T Heatsink - ( C) 180 120 90 60 30 16 14 Mean power dissipation - (kW) 12 10 8 6 4 2 0
0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 500 1000 1500 2000 2500 3000 3500 4000 4500
100
d.c. 180 120 90 60 30
75
50
25
0 Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature, double side cooled - sine wave
Fig.6 On-state power dissipation - rectangular wave
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DCR4330M52
SEMICONDUCTOR
125 Maximum permissible case temperature , T case -( C)
125
Maximum heatsink temperature T heatsink -(o C)
100
100
75
75
50 d.c. 180 120 90 60 30
50 d.c. 180 120 90 60 30
25
25
0
0 500 1000 1500 2000 2500 3000 3500 4000 4500
0
0 500 1000 1500 2000 2500 3000 3500 4000 4500
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature, double side cooled - rectangular wave
Fig.8 Maximum permissible heatsink temperature, double side cooled - rectangular wave
Ri ( C/kW) Ti (s) Ri ( C/kW) Ti (s) Ri ( C/kW) Ti (s) 1 2 1.995338 1.242784 0.05 3 1.9448 4 0.005
Double side cooled
0.592935 0.592385 110.5108 0.05 0.05 110.1735 110.1546
12.0 11.0 Transient Thermal Impedance, Zth - ( C/kW ) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0.001 Anode Side Cooled. Double Side Cooled. Cathode Side Cooled.
Anode side cooled Cathode side cooled
6.092995 1.957372 2.042252 0.035908 5.459764 0.510898 5.181139 0.557321 6.856845 1.876401 2.062845 0.025343
i4
Z th
i1
[ Ri (1 exp(T / Ti )]
ARth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c.
Double side cooling AZth (z) A sine. rect. 180 0.51 0.36 120 0.57 0.49 90 0.64 0.56 60 0.70 0.63 30 0.74 0.71 15 0.76 0.74 Anode Side Cooling AZth (z) A sine. rect. 180 0.51 0.36 120 0.58 0.50 90 0.65 0.57 60 0.71 0.64 30 0.75 0.71 15 0.77 0.75 Cathode Sided Cooling AZth (z) A sine. rect. 180 0.51 0.36 120 0.58 0.50 90 0.65 0.57 60 0.71 0.64 30 0.75 0.71 15 0.77 0.75
0.01
0.1 Time ( s )
1
10
100
Fig.9 Maximum (limit) transient thermal impedance - junction to case ( C/kW)
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DCR4330M52
SEMICONDUCTOR
140 100 Conditions: Tcase = 125 C VR =0 Pulse width = 10ms 130 120 110 Surge current, ITSM - (kA) 100 90 80 70 60 50 40 30 20 10 1 1 10 Number of cycles 100 0 1 10 Pulse width, tP - (ms) Conditions: Tcase= 125 C VR = 0 half-sine wave ITSM I2t
28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 100 I2t (MA2s) 25
Surge current, ITSM- (kA)
10
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
25000 Qsmax = 5413.5*(di/dt)0.4762
600 IRRmax = 58.296*(di/dt)0.7559 500 Reverse recovery current, IRR - (A)
20000 Stored Charge, Qs - (uC)
400
15000
300
Qsmin = 4030.8*(di/dt)0.5002 10000 Conditions: Tj= 125C VRpeak ~ 3100V VRM ~ 2100V snubber as appropriate to control reverse voltage
IRRmin = 49.567*(di/dt)0.7701 Conditions : Tj = 125C VRpeak ~ 3100V VRM ~ 2100V snubber as appropriate to control reverse voltage 0 5 10 15 20
200
5000
100
0 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us)
0 Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge
Fig.13 Reverse recovery current
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DCR4330M52
SEMICONDUCTOR
10 9
Pulse Width us 100 200 500 1000 10000 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 -
Gate trigger voltage, VGT - (V)
8 7 6 5 4 3 2 1 0 0
400 150 125 100 25 -
Upper Limit
Preferred gate drive area
Tj = 125 C
o
Tj = 25oC
Tj = -40oC
Lower Limit
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
30
Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C
25
Gate trigger voltage, VGT - (V)
20
15
10
5
0 0 1 2 3 4 5 6 7 8 9 10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR4330M52
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Device 22CT93M 28CT93M 42CT93M DCR4330M52 DCR3480M65 DCR2760M85
Maximum Minimum Thickness Thickness (mm) (mm) 25.815 25.305 25.89 25.38 26.12 25.61 26.26 25.75 26.5 25.99 26.84 26.33
Nominal weight: 2575g Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: M
Fig.16 Package outline
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DCR4330M52
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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